Abstract
We present advances in the performance and characterization of semipolar (2021) III-nitride laser diodes. These include a high yield facet formation process giving highly vertical and smooth facets (<1 ° from vertical and roughness 2.0 nm) produced by chemically assisted ion beam etching (CAIBE), leading to threshold currents as low as 3 kA/cm2 and threshold voltages as low as 5.5 V for continuous wave laser diodes. Also, we present the experimental measurement of internal loss (9 cm−1), injection efficiency (73%), and gain. The measured internal loss value shows good agreement with a calculated value of 9.5 cm−1, enabling a breakdown of contributions of each layer to the total loss of the laser and identifying routes to new improvements.
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