Abstract

Characterization of external circuit parasitics are important to study the switching dynamics and adverse effects related to that. This paper presents a set of simple experimental measurement techniques to determine different external circuit parasitics relevant for switching transient study of Silicon Carbide (SiC) MOSFET and Schottky barrier diode (SBD) pair. The simulation and experimental results confirm the accuracy of the presented method over a range of operating conditions for a 1.2-kV discrete SiC MOSFET and SBD pair.

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