Abstract
Methods are described for the determination of the high-frequency parameters of junction and surface barrier transistors and involve, in addition to the knowledge of the usual low-frequency parameters, measurement of the product of C <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</inf> and the extrinsic base resistance <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">r_{b0}</tex> , <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">r_{b0}</tex> itself, and the alpha cutoff frequency f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">α</inf> . A previously described method is used to determine the product <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">r_{b0}C_{c}</tex> , but new methods are described for the measurement of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">r_{b0}</tex> and f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">α</inf> . The measurements are of "bridge" type, involving simple circuit adjustments for a response null at a single frequency. Typical experimental results are given for transistors having f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">α</inf> values as high as 85 mc, C <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</inf> values down to 2.3 pF and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">r_{b0}</tex> ranging from 45 to 400 ohms. The limits quoted for f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">α</inf> and C <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</inf> refer to surface barrier transistors. Comparison with results derived by alternative methods of measurement show good agreement.
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