Abstract
A comparison is made between the Seebeck and Nernst effects in semiconductors for the measurement of heat flow. The latter effect would seem to be superior since the Nernst EMF is proportional to temperature gradient rather than temperature difference. This means that devices for measuring the flow of heat based on the Nernst effect may have a very small thermal resistance. A device, incorporating InSb-NiSb eutectic as the active material, has been tested successfully.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
