Abstract
A comparison is made between the Seebeck and Nernst effects in semiconductors for the measurement of heat flow. The latter effect would seem to be superior since the Nernst EMF is proportional to temperature gradient rather than temperature difference. This means that devices for measuring the flow of heat based on the Nernst effect may have a very small thermal resistance. A device, incorporating InSb-NiSb eutectic as the active material, has been tested successfully.
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