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Abstract
In this work the differential cross sections for gamma-ray emission from the 14N(d,pγ)15N (Eγ=1885, 2297, 7299 and 8310keV) and from the 28Si(d,pγ)29Si (Eγ=1273, 2028, 2426 and 4934keV) were measured simultaneously with the 14N(d,p4,5,6,7)15N differential cross sections and 14N(d,d)14N elastic scattering cross section using a HPGe detector at 55° and an ion implanted Si detector at 135° with respect to the beam direction in the deuteron energy range 0.65–2.0MeV. The target was a thin silicon-nitride film. Gamma-ray angular distribution measurements were performed to determine the possible anisotropy of the gamma-ray emission, and the measured cross section values were converted into total gamma-ray producing cross sections for most of the gamma-ray emissions. The average uncertainties of nitrogen and silicon gamma-ray production cross sections are 5% and 12%, respectively and 8% concerning the particle production cross section of natN(d,d0)natN and 14N(d,p4,5,6,7)15N reactions.
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Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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