Abstract
Pulsed operation of in-plane laser diodes with InGaN multiple quantum well active regions was achieved. For uncoated chemically assisted ion beam etched facets, we obtained threshold current densities as low as 10.6 kA/cm2. The external differential quantum efficiency dependence on bar length was used to determine the internal optical loss and internal quantum efficiency of these devices and to calculate the modal gain in the device as a function of the terminal current density. Values of facet reflection were determined by a self-consistent analysis. We have measured 90 cm−1 of modal gain and estimate material gain exceeding 900 cm−1, at 20 kA/cm2.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
