Measurement of Field Emission Property on the Individual Silicon Nanowire by Scanning Tunneling Microscopy

W W Ming,S Z Deng,J C She,J Zhou,W G Xie,N S Xu,Jian Chen

doi:10.1109/ivnc.2006.335466

Measurement of Field Emission Property on the Individual Silicon Nanowire by Scanning Tunneling Microscopy

W W Ming, S Z Deng + Show 5 more

https://doi.org/10.1109/ivnc.2006.335466

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Publication Date: Jul 1, 2006

Affiliation: Sun Yat-sen University

#Scanning Tunneling Microscopy #Field Emission + Show 8 more

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Abstract

Silicon nanowires (SiNWs) array are expected to be a promising cathode in field emission devices. We report field emission (FE) characteristic on individual SiNW apex by using Scanning Tunneling Microscopy (STM) operated in field emission mode at room temperature in ultrahigh vacuum condition. The result revealed the SiNWS has good emission characteristic. In addition, we verified the FN theory was also applicable in micro-scale field emission process through numerical value simulation of the field emission process.

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