Abstract
Abstract— Exo‐electron emission from MgO thin film was measured by attaching a high‐precision current sensor to the address electrode of the rear plate of an ACPDP test panel. The measured results revealed that the exo‐electron emission currents can vary very sensitively with the type of doping elements used in MgO film and the measuring temperature. The activation energy of the exo‐electron emission estimated from the emission curves indicated that the trap levels are between 0.05 and 0.32 eV below the bottom of its conduction band. This suggests that shallow electron‐trap levels within MgO film are mainly responsible for the exo‐electron emission.
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