Abstract
The level of defects in a semiconductor silicon detector diode made of high resistivity N type material and exposed to neutrons in a research nuclear reactor was examined by measuring the thermally stimulated current (TSC). A modified TSC method was employed where the released charge was measured in the reverse direction on a diode with zero bias voltage. Electrons captured in cooled traps due to the photoelectric effect are released when the material is heated. The detector was irradiated with an integral neutron flux of 7.63 × 1015 n/cm2.
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