Measurement of electron overflow in 450 nm InGaN light-emitting diode structures

Abstract

Test structures were developed to experimentally measure the presence of electron overflow in light-emitting diodes (LEDs) under typical bias conditions. These test structures are comprised of a standard LED structure with an extra Mg-doped quantum well inserted on the p-type side of the electron blocking layer. Electrons escaping the active region recombine in the extra quantum well and the corresponding photon emission is observed. No electron overflow was observed at low current densities. At intermediate current densities where efficiency droop occurs, overflow was observed and increased with increasing current density. The onset of electron overflow occurred at slightly lower current densities than the onset of efficiency droop. Auger-assisted overflow, a by-product of the Auger process, is considered in addition to traditional overflow mechanisms.