Abstract
A method of Bragg gratings written in silica-on-silicon planar waveguides to be used to monitor the overall uniformity of the waveguides and grating processing is presented. By measuring the shift of Bragg wavelength with UV exposure time, the initial effective index <i>n</i><sub><i>Oeff</i></sub> and birefringence B<sub>0</sub> of the planar waveguides are measured accurately. With one phase mask, Bragg gratings induced on different waveguides with widths that vary from 4.6 to 8.8 μm, result in variations of N<sub>Oeff</sub> and β<sub>O</sub> of 1.5 x 10<sup>-3</sup>/μm and 1 x 10<sup>-4</sup>/μm, respectively. The result is used as a way of improving control over the waveguide dimensions obtained from the photolithographic and RIE processes, and optimizing the design of ridge waveguide structures to compensate the waveguide birefringence. This will improve the quality of the PLCs that include symmetric Bragg grating structures: MZI-OADM etc. By writing Bragg gratings on the linear taper planar waveguide, a chirped grating response is realized.
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