Abstract
Measurement of Cu drifts in methylsilsesquiazane-methylsilsesquioxane dielectric films in the presence of an electric field was conducted using bias-temperature stress (BTS) and capacitor-voltage (CV) analysis as well as time dependent dielectric breakdown (TDDB) stress. The amount of Cu ions in the dielectric films can be estimated making use of the flatband voltage shift ΔVFB from the BTS. Comparing the flatband voltage measured by CV analysis with the leakage current integrated over time, it is found that the main content of the leakage current during BTS is ionic current that can be attributed to the drift of Cu and mobile ions. The Cu ions cause the leakage current during TDDB stress to increase. The drift rate of Cu in methylsilsesquioxane is lower than the reported values in polyarylene ether (PAE) and fluorinated polyimide (FPI), and larger than that in plasma enhanced chemical vapor deposition (PECVD)-SiON.
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