Abstract
Recently, CMOS Active Pixels Sensors (APS) have becomestrong candidates as pixel detectors to be used in high energy physicsexperiments. A very good resolution and an excellent detection efficiencycould be obtained with these detectors. In this paper we have experimentallystudied, by means of charged particle beams at a grazing angle, for fourdifferent CMOS APS the diffusion properties of electron/hole pairs formed byionizing particles interacting within the sensitive silicon layer beneaththe sensor surface.By averaging many events originating at the same distance from the surfaceof the device, we extracted with great accuracy the charge collectionefficiency (CCE) profiles of the four sensors under test.Basic transport parameters (minority carrier diffusion length, minoritycarrier lifetime, width of the region at maximum CCE) have been extractedusing a mathematical procedure based on the extended Ramo's theorem.
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