Abstract
The free carrier concentration in GaAs-on-Si was measured by Raman scattering at the GaAs back face which is revealed by etching the Si substrate. Asymmetric Raman spectra attributed to the coupled plasmon-longitudinal optical (LO) phonon mode ( L+) observed in the range of 400 to 700 cm-1 indicate that an electron concentration greater than 1.6×1018 cm-3 is induced by incorporation of Si atoms into the GaAs layer at the Si–GaAs interface in metal-organic chemical vapor deposition (MOCVD) grown GaAs-on-Si's at 700° C for 15 min.
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