Abstract
The calibration factors for the determination of boron and phosphorus concentration in single crystal silicon by low temperature Fourier transform infrared spectroscopy are examined, with the aim of comparing the behaviour of float-zone and Czochralski samples. It is shown that common calibration factors, derived from a correlation with four-point probe resistivity measurement, can be applied to both material types. Moreover, no significant difference in carrier mobility is observed between FZ and CZ, as determined by Hall effect measurements, in a wide oxygen range: 2–9×1017 cm-3, confirming that the same conversion algorithm to deduce the carrier concentration from the resistivity measurement can be applied.
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