Abstract
Barrier height (ФBH) values for Pd/hydrogen-terminated diamond (H-diamond) and Pd/oxygen-terminated diamond (O-diamond) have been investigated by X-ray photoelectron spectroscopy technique. H-diamond and O-diamond have been formed on the same diamond (100) layer grown by microwave plasma-enhanced chemical vapor deposition，on which Pd layers have been evaporated. The ФBH values for Pd/H-diamond and Pd/O-diamond are determined to be −0.27eV and 1.73eV, respectively. It indicates that Pd is a suitable metal for ohmic and Schottky contacts on H-diamond and O-diamond, respectively. The experimental ΦBH values are in good agreement with the theoretical calculation results.
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