Abstract
A new hetero-Schottky structure for the study of Schottky barriers and heterojunctions is discussed. Photoelectric measurements have revealed a correlation between Au/GaAs and Au/AlxGa1−xAs Schottky barrier heights and GaAs/AlxGa1−xAs heterojunction band offsets. The conduction-band discontinuity ΔEc in the GaAs/AlxGa1−xAs system is determined, and the ratio ΔEc:ΔEg is found to vary between 69±5% and 58±5% for x=0.15–0.48.
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