Abstract
Si(111) surface treated with HF solution was studied using Fourier transform infrared reflection absorption spectroscopy for the observation of Si–Fx bond absorption and x-ray photoelectron spectroscopy for the identification of the adsorbates on the Si surface. Two absorption peaks were observed in the range of 905–925 cm−1, and they were assigned to Si–F2 symmetric stretching mode at 918 cm−1 and Si–H2 bending mode at 910 cm−1. The absorption peak of Si–F2 distinctly decreased with de-ionized water rinse, though the Si–H2 peak hardly changed. The absorption peak of Si–F was not observed in all spectra. This result indicates that F atoms selectively adsorbed at a step region rather than on a terrace region on Si(111) surface after HF treatment.
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