Abstract
The adhesion strength of copper layers on TaN barrier layers decreases from 19.5 to 10 gf with annealing at 400°C. A much lower stress layer can be obtained when a seed layer is deposited on a TaSiN barrier layer. The adhesion strength is as high as 35 gf and is not changed by annealing. The critical pressure for delamination at the barrier layer/low dielectric (ɛ) layer interface decreases from 350 to when ɛ is reduced from 3.3 to 2.7 in an SiOC interlayer. That is, better adhesion strength can be attained when an interlayer with a higher dielectric constant is used. © 2003 The Electrochemical Society. All rights reserved.
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