Abstract
A measurement-based nonlinear MESFET model is presented, where the large-signal model is constructed from measured small-signal S parameters and dc characteristics. An automatic optimization process is used for finding suitable values for the parasitic components and the intrinsic current sources. The intrinsic model is created with the use of frequency-dependent current sources. The model and the automatic model generator have been implemented in APLAC (analog circuit simulator and design tool) [1]. © 1997 John Wiley & Sons, Inc. Int J Microwave Millimeter-Wave CAE 7: 75–82, 1997.
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