Measurement and Modeling of Heterogeneous Chip-Scale Interconnections

Abstract

We present precision scattering-parameter measurements of chip-to-chip connections in heterogeneous integrated circuits: indium phosphide or gallium nitride “chiplets” mounted on Silicon Complementary Metal-Oxide-Semiconductor carrier chips. We demonstrate methodology, experimental results, and modeling results of these chip-scale interconnections from dc to 110 GHz. We used thru-reflect-line on-wafer calibration to establish reference planes inside heterogeneous integrated circuits, and then, we translated those reference planes to the proximity of the chip-to-chip transitions to isolate their contribution to the scattering parameters.