Abstract
The nonlinear gain response of InGaAsP bulk optical amplifiers under ultrafast optical excitation at 1.53 μm is investigated. In particular, the dependence of the gain saturation energy on the pulse duration is measured in the range of pulse durations from 150 fs to 11 ps, for different bias currents and lengths of the amplifier. By comparison with a theoretical model, a critical pulsewidth is inferred below which nonlinear carrier dynamics like carrier heating and spectral hole burning dominate the gain saturation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.