Abstract
From S-parameter measurements and subsequent equivalent-circuit parameter (ECP) extraction for a series of 0.25- mu m, ion-implanted GaAs MESFETs with different widths and different gate-source and drain-source spacings, parasitic FET pad capacitances and interelectrode capacitances. The active-FET fringe capacitances extracted at pinch-off are compared with results from two-dimensional Poisson simulations. >
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