Abstract
Rutherford backscattering at two different angles on multilayer targets is used to measure the stopping cross sections for hydrogen in five amorphous hydrogenated silicon carbide compounds (a-Si x C 1− x :H) in the energy range from 30 keV/amu to 320 keV/amu. The measured stopping cross sections are compared to the values calculated by means of Bragg's rule. It is found that SiC chemical bonding effects limit the validity of this additivity law at energies near and below the stopping cross section maximum while CH bonding effects are important throughout the whole energy range.
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