Abstract
AbstractSilicon carbide (SiC) is a wideband semiconductor that is very promising for many applications in optoelectronics and microelectronics. Since information on the electron transport processes in SiC is scarce, its systematic study is highly desirable. The aim of this work is to determine experimentally by elastic peak electron spectroscopy (EPES), for the first time, the inelastic mean free paths (IMFPs) in bulk SiC with different structural properties (polycrystalline and monocrystalline materials) and surface concentrations of its constituents. The relative EPES measurements were carried out in the electron energy range 0.2–2.0 keV with two different analyzers (double‐pass cylindrical mirror analyzer (DCMA), spherical sector analyzer (SSA)) and the use of Ni standard. The measured IMFPs were uncorrected for surface excitations and compared with those calculated from the TPP‐2M and G‐1 predictive formulae using Fano plots. Good agreement was found between the measured and the calculated electron IMFPs in SiC exhibiting different structural properties. Copyright © 2006 John Wiley & Sons, Ltd.
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