Abstract
Thin-film V-groove inductors for microprocessor power delivery are discussed. A 10-MHz, 3.3-V to 1.1-V, 7-A dc-dc converter with V-groove inductors has been predicted to have an efficiency of 88% and power density of 60 W of output power per cm/sup 2/ of substrate area. The first prototype inductors with composite granular Co-ZrO/sub 2/ thin-films were fabricated with dimensions smaller than those required for a 7-A converter in order to fabricate them on standard 25-mm silicon wafers. For these prototype devices, we predicted that a 10-MHz, 3.3-V to 1.1-V, 2.1-A dc-dc converter would have 60% efficiency. Measurements on the prototypes indicate that a 2.1-A converter would have 55% efficiency with a power density of 28 W/cm/sup 2/. Measured losses were 23% higher than predicted. We have demonstrated that V-groove inductors can be fabricated with performance close to predicted results.
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