Meaningful improvements on structural-thermal-electronic properties of copper based on 3D nitrogen (N) doped-carbon nanotubes (CNTs) interface fabricated by nano-self-assembly-sintering-modification

Abstract

The development of a material with high ampacity to allow current to flow through narrow channels is one of the most promising ways to address the progressive miniaturization and light weight of electronic devices. The efficient synergistic electron transmission by compounding 1D/2D carbon materials with a metal matrix via various methods in recent years has attracted great research interest due to their potential utilization in electronics. In this study, a copper (Cu) matrix with a 3D nitrogen (N) doped-multi-walled carbon nanotubes (MCNTs) interface with prominent physical features is reported and fabricated, involving the use of nano-self-assembly-heat-modification by adopting polyethyleneimine-nano-Cu and carboxyl MCNTs. Young's modulus was enhanced from 28.8 to 92.2 GPa due to a higher efficiency of stress transfer and interfacial adhesion, and the hardness fitted by Gauss distribution was increased by ∼69% (∼39.7 HRC). Toward the stability after a modification of vacuum reduction sintering, the initial oxidation temperature (Td) was increased largely from 232 °C to 286 °C, and thermal conductivity was enhanced eminently from 358 to 548 W/(m K) due to more efficient electron/phonon motion. Moreover, synergistic electron transmission endowed the final Cu-N-CNTs with a higher ampacity (7.23–16.98 × 104 A cm−2), which could be further observed by the time-evolution of electrical resistivity under a constant current density. The improved physical features state that the assembled 3D N-CNTs interface possesses prominent characteristics and potential for directing the deep applications of 1D or 2D carbon materials in electronic science.