Abstract
The electrical resistivity of the Zn 1− x− y Ga x In y O system was investigated as a function of the dopant content and mean dopant ion radius. The electrical resistivity of all members of the system exhibited metallic behavior as a function of temperature. The lowest electrical resistivity at 873 K fell to 2.81 × 10 −3 (Ω cm) in Zn 0.99Ga 0.0073In 0.0027O. In cases with the same dopant content, the resistivity strongly depended on the mean dopant ion radius, but the Seebeck coefficient was unrelated to those radii. Regardless of dopant content, the minimum resistivity of this system appeared around a mean dopant ion radius of 0.54 Å. Evidently, the carrier mobility is strongly dependent on the magnitude of the mean dopant ion radius and any structural distortion.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
