Abstract
This letter reports the temperature-dependent electrical parameters of Pd/n-ZnO thin film-based Schottky diodes grown on n-Si substrates by thermal evaporation method. The parameters have been investigated by considering a Gaussian distributed barrier height across the Pd/n-ZnO interface with a standard deviation σ0 around a mean barrier height qφB,m. As compared with the reported results, the estimated values of the Richardson constant (~19.54Acm-2K-2) and mean barrier height (~1.41 eV) are much closer to their theoretically predicted values of 32Acm-2K-2 (for me*=0.27 m0) and 1.42 eV (for work function of Pd = 5.12 eV and electron affinity of ZnO = 3.7 eV), respectively.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
