(Me5C5)SiH3 and (Me5C5)2SiH2 as precursors for low‐temperature remote plasma‐enhanced CVD of thin Si3N4 and SiO2 films

Abstract

Silicon nitride (Si3N4) and silica (SiO2) thin films are of interest for applications in microelectronics and optics. Non‐hazardous alternatives to silane (SiH4) as the silicon precursor in the chemical vapor deposition (CVD) of these materials are in attractive target for research. It is shown that pentamethylcyclopentadiene‐substituted dilanes offer the opportunity to tailor precursors for particular CVD requirements.