Abstract
By using the molecular dynamics method (MD) and computer graphics (CG), the surface processing mechanism of SiH2→Si+2H in LP-CVD Silicon wafer fabrication is analyzed, in which we introduce a chemical reaction model consisting of the activating energy and attack angle between SiH2 gaseous molecules and Si atoms monocrystalline. The atom surface adsorption and inelastic collision are discussed considering energy exchange between the particles and surface. Moreover, the potential state and behavior of hydrogen atom adsorbed as a free particle are also calculated and discussed. The relevant potential surface of H free particle in the Si crystal lattice is found to be useful to understand its potential state and behavior.
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