Abstract
Atomic layer epitaxy (ALE) of ZnSe films has been examined by MOMBE system using DMZn and H 2Se as source materials. Depending on whether the source materials are cracked before reaching substrate or not, ALE of ZnSe by both “MBE-like” and “CVD-like” modes can be achieved. In “MBE-like” ALE mode, since thesource materials are supplied onto the subsrate surface in the form of constituent elements, they can migrate on the surface through fairly long distance. On the other hand, in “CVD-like” ALE mode, DMZn and H 2Se themselves react to form ZnSe on the surface, it is fairly hard for them to migrate on the surface. It has been found that “MBE-like” ALE mode is superior to “CVD-like” ALE mode in terms of photoluminescence properties and surface morphology.
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