Abstract
Gallium oxide (Ga 2 O 3 ) has gained increasing attention due to its excellent material properties and the availability of economical device‐quality native substrates. This chapter illustrates various Ga 2 O 3 technologies based on molecular beam epitaxy (MBE)‐grown materials. Following a general introduction to Ga 2 O 3 that reviews basic material properties and features, electronic device applications and melt growth technologies of bulk single crystals, MBE growth technologies and kinetics of Ga 2 O 3 epitaxial layers are discussed. Material properties of Ga 2 O 3 ‐based thin films and heterostructures grown by MBE are also introduced. The fabrication and performance of state‐of‐the‐art Ga 2 O 3 transistors on MBE‐grown epitaxial substrates are then described.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
