Abstract
Gallium oxide (Ga 2 O 3 ) has gained increasing attention due to its excellent material properties and the availability of economical device‐quality native substrates. This chapter illustrates various Ga 2 O 3 technologies based on molecular beam epitaxy (MBE)‐grown materials. Following a general introduction to Ga 2 O 3 that reviews basic material properties and features, electronic device applications and melt growth technologies of bulk single crystals, MBE growth technologies and kinetics of Ga 2 O 3 epitaxial layers are discussed. Material properties of Ga 2 O 3 ‐based thin films and heterostructures grown by MBE are also introduced. The fabrication and performance of state‐of‐the‐art Ga 2 O 3 transistors on MBE‐grown epitaxial substrates are then described.
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