Abstract
An overview of the recent development of modulation doping in the Si/SiGe heterosystem is given. The strain-dependent band ordering at the Si/SiGe interface requires both the growth of strain relaxed buffer layers and of pseudomorphic Si and SiGe layers. Special emphasis is put on the recent breakthrough concerning the material quality of strain-relaxed SiGe buffer layers by introducing a Ge grading. Device applications are discussed in terms of modulation-doped field effect transistors (MODFET). Device implementations with transconductance values comparable to those of III-V MODFETs are presented. A concept for the realization of complimentary MODFETs is discussed.KeywordsMisfit DislocationVery Large Scale IntegrationSiGe LayerThread Dislocation DensityModulation DopingThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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