Abstract
High power semiconductor lasers operating at 808 nm lasing wavelength with high internal quantum efficiency and low internal loss have been fabricated by solid source MBE. Experimental results have shown as high as 65.5 percent maximum wall-plug efficiency at room temperature for 1.5 mm cavity length devices. The wall-plug efficiency maintains up to 58 percent even when the devices operate at 6 watts of CW output power.
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