Abstract
Self-assembled GeSi quantum dots(QDs) were grown by gas source molecular beam epitaxy(MBE).Morphology and optical properties of the QDs were studied by atomic force microscopy(AFM) and photoluminescence(PL) spectra.QDs structure grown by gas source MBE at lower temperature showed a higher QDs coverage,lower defect and impurity density.Below 200 K,carriers are trapped in QDs as excitons with bonding energy of about 17 meV.The transport process changes as increasing the temperature to 200 K.By fitting the temperature dependence curves of PL integrated intensity,the activation energy of 129 meV representing the energy difference between the wetting layer and QDs was obtained.
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