Abstract
The fabrication of semiconductor quantum wire and quantum dot arrays with high uniformity and controlled positioning is an outstanding challenge in nanostructure materials science. We demonstrate a significant step forward by combining self-organized epitaxial growth with lithographic patterning and the assistance of atomic hydrogen on high-index GaAs substrates. This concept provides a strict control of chemical, structural and geometric perfection of these semiconductor nanostructures which is needed for realistic device applications.
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