Abstract
The growth, fabrication, and subsequent electroluminescence (EL) characterization of an n-ZnO/p-GaN heterojunction light-emitting diode prepared on c-Al 2O 3 substrate are presented. The diode-like I– V characteristics and room temperature EL spectrum with an intense broadband emission in the yellow-green spectral region has been observed with forward bias applied. Photoluminescence (PL) and Raman spectra of the n-ZnO and p-GaN films were also measured. By comparing PL and EL spectra, it was concluded that the deep-level defect-related emission mainly originated from the GaN epitaxial layer.
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