Abstract
AbstractThe in plane lattice constant of the silicon film on germanium is shown to alter as the film grows; the changes reflect the process of strains relaxation of that result from the misfit of the Ge and Si lattice constants. The thickness allowing detection of changes in the in plane lattice constant of the Si film during the growth on the Ge surface depends on the germanium layer thickness. The thickness of the silicon film where elastic relaxation is determined as dependent on the germanium layer thickness. TEM studies indicate the vertical ordering of the germanium island layers when the thickness of the Si layer in between Ge layers is not sufficient to provide the full strain relaxation. The vertical ordering of Ge islands in the multilayer structure results in a decrease in the island density at reduced dispersion of their shape and size. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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