Abstract
Lasers with InGaAsP quantum well were grown on GaAs substrates by solid source MBE with phosphorus-cracker cell. Threshold current density of 290 A/cm 2 and slope efficiency as high as 0.68 W/A per facet were obtained for uncoated laser chips at 25°C. Reliability test was performed, and power degradation rate of less than 3×10 −6/h was obtained for laser bars operating at 47 A.
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