Abstract

A new gas source n-type dopant, ethylchloride (EtCl), was used for MBE growth of ZnSe and ZnS. Carrier concentrations up to 3.2 × 1018 and 3.5 × 1017cm−3 were achieved for ZnSe and ZnS, respectively. The use of the gas source dopant is advantageous in maintaining the MBE chamber.

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