Abstract
Novel ternary compound MnGeP 2 thin films have been prepared on InP(0 0 1) substrates by molecular beam epitaxy (MBE), in which Mn and Ge were supplied from solid sources using Knudsen cells and P 2 from a gas source by decomposing tertiary butyl phosphine (TBP). From an X-ray analysis the crystal structure was determined to be tetragonal with lattice constants a = 0.569 nm and c = 1.130 nm , with the c-axis perpendicular to the InP(0 0 1) plane. Optimal conditions to suppress GeP and MnP extraneous phases are discussed.
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