MBE Growth of II-VI and IV-VI Compounds and Alloys

Abstract

MBE growth of II-VI and IV-VI compounds and alloys is driven both by device requirements and by the ability of the technique to generate quantum well structures which can probe areas of narrow band gap semiconductor physics. The present state of knowledge of growth mechanisms and MBE growth techniques of these materials is reviewed. Recent advances in growth of device quality films are described and remaining problems and future trends in the field are discussed.