Abstract
Abstract Molecular beam epitaxy (MBE) has been employed for the growth of strained quantum-well laser structures on InAs substrates. These lasers consist of compressively strained InAsSb wells, tensile-strained InAlAsSb barriers, and lattice-matched AlAsSb cladding layers. Broad-stripe lasers, with emission at wavelengths between 3.2 and 3.55 μm, have exhibited cw power of 215 mW/facet at 80 K, pulsed threshold current density as low as 30 A/cm 2 at 80 K, characteristic temperatures ( T 0 ) between 30 and 40 K, and maximum pulsed operating temperature of 225 K. Ridge-waveguide lasers have cw threshold current of 12 mA at 100 K, and a maximum cw operating temperature of 175 K. In this paper we will present some of the key issues regarding the MBE growth of such high-power lasers on InAs and discuss future directions for improved device performance.
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