Abstract
Two kinds of short-period type II superlattices (SLs) InAs (6 monolayers (MLs))/GaSb (3 MLs) and InAs (8 MLs)/GaSb (8 MLs) which can serve for mid-infrared (MIR) detection have been grown by molecular beam epitaxy (MBE) on p-type GaSb (100) substrates. The cutoff wavelength for the two superlattices (SLs) was found to be around 4.8 µm at 300 K. The high resolution X-ray diffraction (HRXRD) measurements indicated that the InAs (8 MLs)/GaSb (8 MLs) SLs have better crystalline quality than that of the InAs (6 MLs)/GaSb (3 MLs) SLs. However, compared with infrared absorption in the 2.5–4.3 µm range, the optical absorption of InAs (6 MLs)/GaSb (3 MLs) SLs was more excellent. This can be attributed to increase probability of the electron and hole wave function overlap in the thinner period thickness.
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