Abstract
AbstractA ferroelectric YMnO3 thin films are grown on Si (111) substrates using Y2O3 buffer layers by molecular beam epitaxy (MBE). In-situ reflection high-energy electron diffraction (RHEED) analyses show that both Y2O3 and YMnO3 films are epitaxially grown on Si substrates. X-ray rocking curve measurements also show that the best FWHM (full width at half maximum) values for Y2O3 and YMnO3 films are 0.40° and 0.8°, respectively. C-V characteristics of Al/YMnO3/Y2O3/Si structures indicate the ferroelectric properties of YMnO3 films with a memory window of 0.7V.
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