Abstract
As a direct band-gap semiconductor, ternary nitride alloy In x Ga1- x N has a tunable energy band-gap from 3.43 eV (for GaN) to 0.64 eV (for InN) with increasing In content, which covers the spectrum from 0.36 to 1.9 μm. In x Ga1- x N alloy has high electron drift velocity and absorption coefficient, which shows great potential application in devices such as full spectrum solar cells and light-emitting devices. Due to lack of proper substrate, In x Ga1- x N is usually grown on sapphire or GaN template. In this article, we review the growth and properties of InN and InGaN with tuable In composition grown on sapphire substrate and GaN/sapphire template by MBE. A boundary-temperature-controlled method is proposed, which successfully lead to a high-electron-mobility InN layers on sapphire substrate by MBE. The temperature-controlled epitaxy method used to grow In x Ga1- x N layers with tunable In composition on GaN/sapphire template.
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