MBE growth of cubic Al x In 1–x N and Al x Ga y In 1–x–y N lattice matched to GaN

Abstract

Ternary and quaternary cubic c-AlxIn1–xN/GaN and c-AlxGayIn1–x–yN/GaN heterostructures lattice-matched to c-GaN on freestanding 3C-SiC substrates were grown by plasma-assisted molecular beam epitaxy. The c-AlxGayIn1–x–yN alloy permits the independent control of band gap and lattice parameter. The ternary and quaternary films were grown at 620 °C. Different alloy compositions were obtained by varying the Al and Ga fluxes. The alloy composition was measured by Energy Dispersive X-ray Spectroscopy (EDX) and Rutherford Backscattering Spectrometry (RBS). X-ray reciprocal space map of asymmetric (-1-13) reflex were used to measure the lattice parameters and to verify the lattice match between the alloy and the c-GaN buffer. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)