Abstract
Undoped AlGaAs/GaAs asymmetric double quantum wells (ADQWs) and Si-doped single epitaxial GaAs layers were prepared on non-(1 0 0) oriented GaAs( n 1 1)A ( n=1–4) substrates in molecular beam epitaxy (MBE) at different As pressures. The grown thickness was the same for (1 0 0) and ( n 1 1)A substrates as revealed by a transmission electron microscope observation. The surfaces of ( n 1 1)A samples change from rough to smooth and featureless with increasing As pressure, while that of (1 0 0) sample shows an inverse change according to the atomic force microscopy results. Photoluminescence spectra of ADQWs have shown that, the luminescence peak energies shift towards lower energy direction with increasing As pressures. The conduction type of ( n 1 1)A was p-type for lower As pressure and n-type for higher As pressure.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
