Abstract
2.3 μm InGaAsSb/AlGaAsSb lasers with multiple quantum wells(MQWs) have been demonstrated.The growth temperature of quantum wells is 440°C,and the growth quality of InGaAsSb/AlGaAsSb MQWs is examined by X-ray diffraction and Photoluminescence(PL) at room temperature.The energy band structure of MQWs was calculated by one-dimensional finite-difference method(1D-FDM)
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